I-GTO snubber capacitor kwisixhobo sombane sombane

I-GTO snubber capacitor kwizixhobo zombane ze-elektroniki ezibonisiweyo

Inkcazelo emfutshane:

Iisekethe ze-snubber ziyimfuneko kwiidiode ezisetyenziselwa ukuguqula iisekethe.Inokugcina i-diode kwi-spikes overvoltage, enokuthi ivele ngexesha lenkqubo yokubuyisela umva.

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

Idatha yobugcisa

Uluhlu lobushushu obusebenzayo	Ubushushu bokusebenza okuphezulu
uluhlu lwamandla	0.22～3μF
Umbane olinganisiweyo	3000V.DC～10000V.DC
Cap.tol	±5%(J) ;±10%(K)
Ukumelana nombane	1.35Un DC/10S
I-Disipation factor	Tgδ≤0.001 f=1KHz
Ukumelana ne-insulation	C≤0.33μF RS≥15000 MΩ (ku-20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S (ku-20℃ 100V.DC 60S)
Ukumelana nogwayimbo lwangoku	bona idata
Izinto ozilindile emhlabane	100000h(Un; Θhotspot≤70°C)
Umgangatho weReferensi	IEC 61071 ;

Uphawu

1. Iteyiphu yeMylar, Itywinwe ngentlaka;

2. Iinkozo zobhedu;

3. Ukumelana nombane ophezulu, i-tgδ ephantsi, ukunyuka kobushushu obuphantsi;

4. i-ESL ephantsi kunye ne-ESR;

5. I-pulse ephezulu yangoku.

Isicelo

1. GTO Snubber.

2. Isetyenziswa ngokubanzi kwizixhobo zombane zamandla xa i-voltage ephezulu, i-peak yangoku yokukhuselwa.

Isekethe eqhelekileyo

Umzobo wokuzoba

Inkcazo

Un=3000V.DC
Isakhono (μF)	φD (mm)	L(mm)	L1(mm)	I-ESL(nH)	I-dv/dt(V/μS)	Ipk(A)	I-Irms(A)
0.22	35	44	52	25	1100	242	30
0.33	43	44	52	25	1000	330	35
0.47	51	44	52	22	850	399	45
0.68	61	44	52	22	800	544	55
1	74	44	52	20	700	700	65
1.2	80	44	52	20	650	780	75
1.5	52	70	84	30	600	900	45
2.0	60	70	84	30	500	1000	55
3.0	73	70	84	30	400	1200	65
4.0	83	70	84	30	350	1400	70
Un=6000V.DC
Isakhono (μF)	φD (mm)	L(mm)	L1(mm)	I-ESL(nH)	I-dv/dt(V/μS)	Ipk(A)	I-Irms(A)
0.22	43	60	72	25	1500	330	35
0.33	52	60	72	25	1200	396	45
0.47	62	60	72	25	1000	470	50
0.68	74	60	72	22	900	612	60
1	90	60	72	22	800	900	75

Un=7000V.DC
Isakhono (μF)	φD (mm)	L(mm)	L1(mm)	I-ESL(nH)	I-dv/dt(V/μS)	Ipk(A)	I-Irms(A)
0.22	45	57	72	25	1100	242	30
0.68	36	80	92	28	1000	680	25
1.0	43	80	92	28	850	850	30
1.5	52	80	92	25	800	1200	35
1.8	57	80	92	25	700	1260	40
2.0	60	80	92	23	650	1300	45
3.0	73	80	92	22	500	1500	50

Un=8000V.DC
Isakhono(μF)	φD (mm)	L(mm)	L1(mm)	I-ESL(nH)	I-dv/dt(V/μS)	Ipk(A)	I-Irms(A)
0.33	35	90	102	30	1100	363	25
0.47	41	90	102	28	1000	470	30
0.68	49	90	102	28	850	578	35
1	60	90	102	25	800	800	40
1.5	72	90	102	25	700	1050	45
2.0	83	90	102	25	650	1300	50

Un=10000V.DC
Isakhono (μF)	φD (mm)	L(mm)	L1(mm)	I-ESL(nH)	I-dv/dt(V/μS)	Ipk(A)	I-Irms(A)
0.33	45	114	123	35	1500	495	30
0.47	54	114	123	35	1300	611	35
0.68	65	114	123	35	1200	816	40
1	78	114	123	30	1000	1000	55
1.5	95	114	123	30	800	1200	70