I-capacitor yefilimu eyenziwe ngesinyithi yesicelo sobonelelo lwamandla (DMJ-MC)
Idatha yobugcisa
Uluhlu lobushushu obusebenzayo | Max.Ubushushu bokusebenza: +85℃ Ubushushu bodidi oluphezulu:+70℃ Ubushushu bodidi olusezantsi: -40℃ | |
uluhlu lwamandla | 50μF~4000μF | |
Umbane olinganisiweyo | 450V.DC~4000V.DC | |
Ukunyamezela amandla | ±5%(J);±10%(K) | |
Ukumelana nombane | Vt-t | 1.5Un DC/60S |
Vt-c | 1000+2×Un/√2 (V.AC) 60S(min3000 V.AC) | |
Ngamandla ombane | 1.1Un(30% yokulayisha-ngexesha) | |
1.15Un(30min/usuku) | ||
1.2Un(imizuzu emi-5/usuku) | ||
1.3Un(1min/usuku) | ||
I-1.5Un (100ms rhoqo, amaxesha angama-1000 ngexesha lobomi) | ||
I-Disipation factor | Tgδ≤0.003 f=100Hz | |
tgδ0≤0.0002 | ||
Ukumelana ne-insulation | Rs*C≥10000S (at20℃ 100V.DC 60s) | |
Ukubuyiswa komlilo | UL94V-0 | |
Ubuninzi bobude | 3500m | |
uyilo lwesiko luyimfuneko xa umphakamo wofakelo ungaphezulu kwe-3500m | ||
Izinto ozilindile emhlabane | 100000h(Un; Θhotspot≤70 °C) | |
Umgangatho weReferensi | IEC61071 ;GB/T17702; |
Amandla ethu
1. Inkonzo yoyilo ngokwezifiso ngokwesicelo esithile;
2. Iqela lobugcisa elinamava eCRE ukuxhasa abathengi bethu ngesona sisombululo sinobuchule;
3. Iiyure ezingama-24 zenkonzo ye-intanethi;
4. I-datasheet, imizobo, iiprojekthi eziyimpumelelo ziyafumaneka.
Uphawu
Umda wesicelo se-DC capacitors uhluke ngokufanayo.Ii-capacitors ezigudileyo zisetyenziselwa ukunciphisa icandelo le-AC lombane oguquguqukayo we-DC (njengakubonelelo lwamandla osetyenziso lwemizi-mveliso).
Ii-capacitors zethu zefilimu ziyakwazi ukufunxa kwaye zikhulule imisinga ephezulu kakhulu kwixeshana elifutshane, amaxabiso aphezulu ee-currents akhulu kakhulu kunexabiso le-RMS.
I-Surge (i-pulse) yokukhupha ii-capacitors ziyakwazi ukubonelela okanye ukufunxa ngokugqithisileyo okwexeshana elifutshane ngoku.Ngokuqhelekileyo zisetyenzwa kwizicelo zokukhutshwa kunye nee-voltage ezingaguqukiyo, kunye nokuphindaphinda okuphantsi kwamaza, njengakwiteknoloji ye-laser.
Isicelo
1. Izixhobo zokuvavanya amandla ombane aphezulu;
2. Abalawuli beDC;
3. Itekhnoloji yokulinganisa nokulawula;
4. Ukugcinwa kwamandla kwiisekethe ze-DC eziphakathi;
5. abaguquli bamandla e-transistor kunye ne-thyristor;