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Umzi-mveliso othengisiweyo oshushu we-Snubber ye-Thyristor eneMvulo ePhakamileyo-udidi oluphezulu lwe-IGBT loyilo lwe-Snubber ye-capacitor yezicelo zamandla aphezulu-CRE

Umzi-mveliso othengisiweyo oshushu we-Snubber ye-Thyristor eneMandla aPhezulu-Uyilo oluphezulu lwe-IGBT Snubber ye-capacitor yoyilo lwezicelo zamandla aphezulu-I-CRE Featured Image
  • Umzi-mveliso othengisiweyo oshushu we-Snubber ye-Thyristor eneMvulo ePhakamileyo-udidi oluphezulu lwe-IGBT loyilo lwe-Snubber ye-capacitor yezicelo zamandla aphezulu-CRE
  • Umzi-mveliso othengisiweyo oshushu we-Snubber ye-Thyristor eneMvulo ePhakamileyo-udidi oluphezulu lwe-IGBT loyilo lwe-Snubber ye-capacitor yezicelo zamandla aphezulu-CRE
  • Umzi-mveliso othengisiweyo oshushu we-Snubber ye-Thyristor eneMvulo ePhakamileyo-udidi oluphezulu lwe-IGBT loyilo lwe-Snubber ye-capacitor yezicelo zamandla aphezulu-CRE
  • Umzi-mveliso othengisiweyo oshushu we-Snubber ye-Thyristor eneMvulo ePhakamileyo-udidi oluphezulu lwe-IGBT loyilo lwe-Snubber ye-capacitor yezicelo zamandla aphezulu-CRE

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Amaziko ethu axhotyiswe kakuhle kunye nomgangatho olungileyo obalaseleyo kuwo onke amanqanaba emveliso kusenza siqinisekise ukwaneliseka ngokupheleleyo kwabathengi.Welding Inverter Dc Link Capacitor , Ifilimu yeCapacitor ye-Abb Inverter , I-Electronic Capacitor, Ngoko ke, sinokudibana nemibuzo eyahlukeneyo evela kubaxumi abahlukeneyo.Nceda ufumane iwebhusayithi yethu ukujonga ulwazi oluninzi kwiimveliso zethu.
Umzi-mveliso othengisiweyo oshushu we-Snubber ye-Thyristor eneMandla aPhezulu-Uyilo oluphezulu lwe-IGBT Snubber ye-capacitor yoyilo lwezicelo zamandla aphezulu-CRE Iinkcukacha:

Idatha yobugcisa

Uluhlu lobushushu obusebenzayo Ubushushu bokusebenza obukhulu.,Phezulu,ubukhulu: +105℃

Ubushushu bodidi oluphezulu: +85℃

Ubushushu bodidi olusezantsi: -40℃
uluhlu lwamandla 0.1μF～5.6μF
Umbane olinganisiweyo 700V.DC～3000V.DC
Cap.tol ±5%(J);±10%(K)
Ukumelana nombane 1.5Un DC/10S
I-Disipation factor tgδ≤0.0005 C≤1μF f=10KHz

tgδ≤0.001 C≥1μF f=10KHz
Ukumelana ne-insulation

C≤0.33μF RS≥15000 MΩ (at20℃ 100V.DC 60S)

C＞0.33μF RS*C≥5000S(at20℃ 100V.DC 60S)
Ukumelana nogwayimbo lwangoku

bona idata
Ukubuyiswa komlilo

UL94V-0
Izinto ozilindile emhlabane

100000h(Un; Θhotspot≤85°C)
Umgangatho weReferensi

IEC61071;GB/T17702;

Itheyibhile yokuchaza

I-Voltage Un 700V.DC,Urms400Vac;Us1050V
Ubungakanani (mm)
Cn(μF) L(±1) T(±1) H(±1) ESR @100KHz (mΩ) I-ESL(nH) I-dv/dt (V/μS) Ipk(A) Irms @40℃ @100KHz (A)
0.47 42.5 24.5 27.5 12 25 500 235 8
0.68 42.5 24.5 27.5 10 25 480 326.4 10
1 42.5 24.5 27.5 8 24 450 450 12
1.5 42.5 33.5 35.5 7 25 430 645 5
2 42.5 33 35.5 6 24 420 840 15
2.5 42.5 33 45 6 23 400 1000 18
3 42.5 33 45 5.5 22 380 1140 20
3 57.5 30 45 5 26 350 1050 22
3.5 42.5 33 45 5 23 350 1225 25
3.5 57.5 30 45 6 25 300 1050 22
4.7 57.5 35 50 5 28 280 1316 25
5.6 57.5 38 54 4 30 250 1400 25
6 57.5 38 54 3.5 33 230 1380 28
6.8 57.5 42.5 56 3.2 32 220 1496 32
8 57.5 42.5 56 2.8 30 200 1600 33
I-Voltage Un 1000V.DC,Urms500Vac;Us1500V
Ubungakanani (mm)
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) I-ESL(nH) I-dv/dt(V/μS) Ipk(A) Ii-Irms
0.47 42.5 24.5 27.5 11 25 1000 470 10
0.68 42.5 24.5 27.5 8 25 800 544 12
1 42.5 33.5 35.5 6 24 800 800 15
1.5 42.5 33 45 6 24 700 1050 15
2 42.5 33 45 5 22 700 1400 20
2.5 57.5 30 45 5 30 600 1500 22
3 57.5 35 50 4 30 600 1800 25
3.3 57.5 35 50 3.5 28 550 1815 25
3.5 57.5 38 54 3.5 28 500 1750 25
4 57.5 38 54 3.2 26 500 2000 28
4.7 57.5 42.5 56 3 25 420 1974 30
5.6 57.5 42.5 56 2.8 24 400 2240 32
I-Voltage Un 1200V.DC,Urms550Vac;Us1800V
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) I-ESL(nH) I-dv/dt(V/μS) Ipk(A) Ii-Irms
0.47 42.5 24.5 27.5 11 24 1200 564 10
0.68 42.5 33.5 35.5 7 23 1100 748 12
1 42.5 33.5 35.5 6 22 800 800 14
1.5 42.5 33 45 5 20 800 1200 15
2 57.5 30 45 4 30 750 1500 20
2.5 57.5 35 50 4 28 700 1750 25
3 57.5 35 50 4 27 600 1800 25
3.3 57.5 38 54 4 27 550 1815 28
3.5 57.5 38 54 3.5 25 500 1750 28
4 57.5 42.5 56 3.5 25 450 1800 30
4.7 57.5 42.5 56 3.2 23 420 1974 32
I-Voltage Un 1700V.DC,Urms575Vac;Us2250V
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) I-ESL(nH) I-dv/dt(V/μS) Ipk(A) Ii-Irms
0.33 42.5 24.5 27.5 12 25 1300 429 9
0.47 42.5 24.5 27.5 10 24 1300 611 10
0.68 42.5 33.5 35.5 8 23 1300 884 12
1 42.5 33 45 7 22 1200 1200 15
1.5 42.5 33 45 6 22 1200 1800 18
1.5 57.5 30 45 5 31 1200 1800 20
2 57.5 30 45 5 30 1100 2200 22
2.5 57.5 35 50 4 28 1100 2750 25
3 57.5 38 54 4 27 700 2100 25
3.3 57.5 38 54 3.8 26 600 1980 28
3.5 57.5 42.5 56 3.5 25 500 1750 30
4 57.5 42.5 56 3.2 25 450 1800 32
I-Voltage Un 2000V.DC,Urms700Vac;Us3000V
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) I-ESL(nH) I-dv/dt(V/μS) Ipk(A) Ii-Irms
0.22 42.5 24.5 27.5 15 25 1500 330 10
0.33 42.5 33.5 35.5 12 24 1500 495 12
0.47 42.5 33.5 35.5 11 23 1400 658 15
0.68 42.5 33 45 8 22 1200 816 18
0.68 57.5 30 45 7 30 1100 748 20
0.82 42.5 33 45 7 28 1200 984 22
1 57.5 30 45 6 28 1100 1100 25
1.5 57.5 35 50 5 25 1000 1500 28
2 57.5 38 54 5 24 800 1600 28
2.2 57.5 42.5 56 4 23 700 1540 32
I-Voltage Un 3000V.DC,Urms750Vac;Us4500V
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) I-ESL(nH) I-dv/dt(V/μS) Ipk(A) Ii-Irms
0.15 42.5 33 45 18 28 2500 375 25
0.22 42.5 33 45 15 27 2200 484 28
0.22 57.5 35 50 15 25 2000 330 20
0.33 57.5 35 50 12 24 1800 495 20
0.47 57.5 38 54 11 23 1600 752 22
0.68 57.5 42.5 56 8 22 1500 1020 28
Imifanekiso yeenkcukacha zemveliso:

Umzi-mveliso othengisiweyo oshushu we-Snubber ye-Thyristor eneMandla aPhezulu-Uyilo oluphezulu lwe-IGBT Snubber ye-capacitor yoyilo lokusetyenziswa kwamandla aphezulu-imifanekiso yeenkcukacha ze-CRE

Umzi-mveliso othengisiweyo oshushu we-Snubber ye-Thyristor eneMandla aPhezulu-Uyilo oluphezulu lwe-IGBT Snubber ye-capacitor yoyilo lokusetyenziswa kwamandla aphezulu-imifanekiso yeenkcukacha ze-CRE

Umzi-mveliso othengisiweyo oshushu we-Snubber ye-Thyristor eneMandla aPhezulu-Uyilo oluphezulu lwe-IGBT Snubber ye-capacitor yoyilo lokusetyenziswa kwamandla aphezulu-imifanekiso yeenkcukacha ze-CRE

Umzi-mveliso othengisiweyo oshushu we-Snubber ye-Thyristor eneMandla aPhezulu-Uyilo oluphezulu lwe-IGBT Snubber ye-capacitor yoyilo lokusetyenziswa kwamandla aphezulu-imifanekiso yeenkcukacha ze-CRE

IsiKhokelo seMveliso esiNxulumeneyo:
Injongo yethu ngokuqhelekileyo kukwanelisa abathengi bethu ngokunikela ngomboneleli wegolide, ireyithi enkulu kunye nomgangatho omhle weFactory made hot-sale Snubber For High Powered Thyristor - High-class IGBT Snubber capacitor design kwizicelo zamandla aphezulu - CRE , Imveliso iya kubonelela kubo bonke. kwihlabathi jikelele, njenge: Monaco, Portugal, Montreal, Sinabathengi abavela kumazwe angaphezu kwama-20 kwaye igama lethu liye laqatshelwa ngabathengi bethu abahloniphekileyo.Uphuculo olungapheliyo kunye nokuzabalazela ukunqongophala kwe-0% yimigaqo-nkqubo yethu emibini ephambili yomgangatho.Ukuba ufuna nantoni na, ungalibazisi ukuqhagamshelana nathi.
    • Akulula ukufumana umboneleli onjalo oqeqeshiweyo kunye nonoxanduva kwixesha lanamhlanje.Ndiyathemba ukuba sinokugcina intsebenziswano yexesha elide. Iinkwenkwezi ezi-5 NguMaxine ovela eMiami - 2017.06.16 18:23
    Eli shishini kushishino lomelele kwaye liyakhuphisana, liqhubela phambili namaxesha kwaye liphuhlise ukuzinzileyo, siyavuya kakhulu ukuba sibe nethuba lokusebenzisana! Iinkwenkwezi ezi-5 NguSara ovela eBelize - 2017.06.25 12:48

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